1. Education
2016.09-2019.01, M.E., Tianjin University, school of precision instrument and opto-electronics, Tianjin, china.
2012.09-2016.06, B.E., Fuzhou university, school of physical information engineering, Fuzhou, china.
2. Awards
2019 outstanding graduated student of Tianjin University;
2018-2019 national scholarship;
2016-2017,2017-2018 first-class scholarship of Tianjin university;
2015 national scholarship of encouragement;
2014 Second prize of the national non-standard robot-cup competition;
2012-2015, first-class scholarship of Fuzhou university;
3. Selected publications
1. Zhang R, Xie Z, An C, et al. Ultraviolet light-induced persistent and degenerated doping in MoS2 for potential photocontrollable electronics applications[J]. ACS applied materials & interfaces, 2018, 10(33): 27840-27849.
2. Zhang R, Ma X, An C, et al. Self-powered photodetector based on vertical MoO3/MoS2 hetero-structure with gate tunable photo-response[J]. 2D Materials, 2019, 6(3): 035033.
3. Zhang R, An C, Xu L, et al. Homogenous Tunnel Diode Based on Two-Dimensional Molybdenum Disulfide with Light Induced n+ Doping[J]. ACS Applied Electronic Materials, 2019, 1(4): 523-529.
4. An C, …, Zhang R, et al. The Opposite Anisotropic Piezoresistive Effect of ReS2[J]. ACS nano, 2019, 13(3): 3310-3319.
